Measurement and gate-voltage dependence of channel and series resistances in lateral depletion-mode β-Ga2O3 MOSFETs

Abstract Lateral depletion-mode, beta-phase gallium oxide ( β -Ga 2 O 3 ) metal-oxide-semiconductor field-effect transistors (MOSFETs) with source-drain spacings of µ m, 8 and 13 m are studied using a modified transfer length method (TLM) to obtain sheet resistances in the gated ungated regions as well observe their gate electric field dependence. The TLM requires contact resistance be independent gate-source voltage, or changing current density. We verify this by performing measurements on conventional structures dark UV conditions density constant resistance, enabling development proposed method. give 20.0 kΩ sq −1 ± 1.0 27.5 0.8 , respectively. Using traditional for determining channel improves convergence between three devices, showing higher accuracy than structures. Gate-source voltage dependence is seen regions, leading non-ideal behavior which cannot observed These results analysis methods important improving MOSFET parameter extraction understanding effects series MOSFETs.